The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
May. 21, 2002
Katsuya Oda, Hachioji, JP;
Katsuya Oda, Hachioji, JP;
Renesas Technology Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprising a plurality of single-crystal semiconductor layers formed, for example, in an opening of an insulating film, said semiconductor layers having no or very few crystal defects. The method comprises forming in a first growth chamber a first semiconductor layer of a first conductivity type in an opening of an insulating film and subsequently forming in a second growth chamber a second semiconductor layer of a second conductivity type in an opening of an insulating film, while supplying hydrogen to the surface of the substrate when the substrate is transferred from said first growth chamber to said second growth chamber.