The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Dec. 31, 2002
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Maximilian A. Biberger, Palo Alto, CA (US);
Erich R. Klawuhn, San Jose, CA (US);
Kwok Fai Lai, Palo Alto, CA (US);
Karl B. Levy, Los Altos, CA (US);
J. Patrick Rymer, Livermore, CA (US);
Kaihan A. Ashtiani, Sunnyvale, CA (US);
Maximilian A. Biberger, Palo Alto, CA (US);
Erich R. Klawuhn, San Jose, CA (US);
Kwok Fai Lai, Palo Alto, CA (US);
Karl B. Levy, Los Altos, CA (US);
J. Patrick Rymer, Livermore, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.