The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Oct. 03, 2003
Chuan-yi Lin, Hsin-Chu, TW;
Yee-chia Yeo, Hsin-Chu, TW;
Chuan-Yi Lin, Hsin-Chu, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having a plurality of silicidation steps is provided. In the preferred embodiment in which the semiconductor device is a MOSFET, the source/drain regions are silicided. A dielectric layer is formed and the etch stop layer is removed from the gate electrode of the MOSFET. A second silicidation process is performed to silicide the gate electrode. The process may be performed individually for each transistor, allowing the electrical characteristics of each transistor to be determined individually.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile