The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Nov. 10, 2003
Applicants:
Toshiaki Ono, Tokyo, JP;
Tadami Tanaka, Tokyo, JP;
Masataka Hourai, Tokyo, JP;
Inventors:
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B009/00 ; C30B015/04 ;
U.S. Cl.
CPC ...
Abstract
A silicon wafer is doped with boron and germanium in a range that satisfies a relational expression defined by: −0.8×10≦4.64×10×[Ge]−2.69×10×[B]≦1.5×10. This can reduce the miss-fit dislocation which might be induced when an epitaxial layer is grown over the silicon wafer that has been added with boron in high concentration. It is to be noted that in the above relational expression, the [B] denotes a boron concentration, while the [Ge] denotes a germanium concentration and a concentration unit is indicated by atoms/cm.