The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Mar. 05, 2003
Ajay Kumar, Sunnyvale, CA (US);
Anisul H Khan, Santa Clara, CA (US);
Sanjay M Thekdi, Santa Clara, CA (US);
Sharma V Pamarthy, Hayward, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Anisul H Khan, Santa Clara, CA (US);
Sanjay M Thekdi, Santa Clara, CA (US);
Sharma V Pamarthy, Hayward, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.