The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Dec. 31, 2002
Applicant:
Masatoshi Ishikawa, Hyogo, JP;
Inventor:
Masatoshi Ishikawa, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C011/00 ;
U.S. Cl.
CPC ...
Abstract
An MTJ memory cell has an access transistor which turns on in response to activation of a corresponding word line and a tunneling magneto-resistance element which has an electric resistance changing in accordance with stored data. The access transistor has a source connected to a source line for supplying a ground voltage. To restrict an off leakage current in a non-selected access transistor, each access transistor is configured with a MOS transistor having a threshold voltage that is larger than that of another MOS transistor formed on the same chip.