The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
May. 14, 2001
Kazuhiko Hayashi, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Masafumi Nakada, Tokyo, JP;
Eizo Fukami, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Hiroaki Honjo, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Kunihiko Ishihara, Tokyo, JP;
Shigeru Mori, Tokyo, JP;
Kazuhiko Hayashi, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
Nobuyuki Ishiwata, Tokyo, JP;
Masafumi Nakada, Tokyo, JP;
Eizo Fukami, Tokyo, JP;
Kiyokazu Nagahara, Tokyo, JP;
Hiroaki Honjo, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Kunihiko Ishihara, Tokyo, JP;
Shigeru Mori, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.