The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
May. 16, 2003
Lap Chan, Singapore, SG;
Sanford Chu, Singapore, SG;
Chit Hwei NG, Singapore, SG;
Yong Ju, San Jose, CA (US);
Jia Zhen Zheng, Singapore, SG;
Lap Chan, Singapore, SG;
Sanford Chu, Singapore, SG;
Chit Hwei Ng, Singapore, SG;
Yong Ju, San Jose, CA (US);
Jia Zhen Zheng, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
An improved method to deposit, by atomic layer deposition, ALD, a copper barrier and seed layer for electroless copper plating, filling trench and channel or tunnel openings in a damascene process, for the fabrication of interconnects and inductors, has been developed. A process flow outlining the method of the present invention is as follows: (1) formation of trenches and channels, (2) atomic layer deposition of copper barrier and seed, (3) electroless deposition of copper, (4) chemical mechanical polishing back of excess copper, and (5) barrier deposition, SiN, forming copper interconnects and inductors.