The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2005

Filed:

Oct. 15, 2002
Applicants:

John G. Maltabes, Austin, TX (US);

Alain Charles, The Sterling #09-04, SG;

Karl E. Mautz, Round Rock, TX (US);

Joseph Petrucci, New Milford, CT (US);

Inventors:

John G. Maltabes, Austin, TX (US);

Alain Charles, The Sterling #09-04, SG;

Karl E. Mautz, Round Rock, TX (US);

Joseph Petrucci, New Milford, CT (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract

A lithography and etching method for forming an alignment mark () and at least one device feature (such as a shallow trench) on a wafer () is provided. The etching process () comprises: a first etching step () for pre-defining at least one alignment mark () and a second etching step () for defining desired semiconductor device patterns (such as a shallow trench) on said wafer surface and completing said at least one alignment mark ().


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