The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Oct. 09, 2003
Applicant:
Shih-fang Chen, Hsinchu, TW;
Inventor:
Shih-Fang Chen, Hsinchu, TW;
Assignee:
Promos Technologies Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/20 ;
U.S. Cl.
CPC ...
Abstract
A trench capacitor process for preventing parasitic leakage. The process is capable of blocking leakage current from a parasitic transistor adjacent to the trench, and includes the steps of forming a doping layer and a cap layer covering portions of the sidewall of the trench and performing an annealing process on the doping layer to form a dopant region in the substrate adjacent to each sidewall of the trench and blocks leakage current from a parasitic transistor adjacent to the trench.