The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Oct. 03, 2003
George J. Kluth, Campbell, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Qi Xiang, San Jose, CA (US);
Huicai Zhong, Wappinger Falls, NY (US);
George J. Kluth, Campbell, CA (US);
Joong S. Jeon, Cupertino, CA (US);
Qi Xiang, San Jose, CA (US);
Huicai Zhong, Wappinger Falls, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate comprises a step of forming a high-k dielectric layer over the substrate. The high-k dielectric layer may be, for example, hafnium oxide or zirconium oxide. The method further comprises forming a first polysilicon layer over the high-k dielectric layer, where the first polysilicon layer is formed by utilizing a precursor does not comprise hydrogen. The first polysilicon layer can have a thickness of between approximately 50.0 Angstroms and approximately 200.0 Angstroms, for example. According to this exemplary embodiment, the method can further comprise forming a second polysilicon layer over the first polysilicon layer. The second polysilicon layer may be formed, for example, by utilizing a precursor that comprises hydrogen, where the first polysilicon layer prevents the hydrogen from interacting with the high-k dielectric layer.