The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Aug. 18, 2003
Applicants:
Shenlin Chen, Boise, ID (US);
Jianping Zhang, Centreville, VA (US);
Inventors:
Shenlin Chen, Boise, ID (US);
Jianping Zhang, Centreville, VA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract
Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to firm hemi-shperical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.