The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jul. 29, 2003
Chih-chin Chang, Hsinchu, TW;
Chih-hung Wu, Shinjuang, TW;
Chih-Chin Chang, Hsinchu, TW;
Chih-Hung Wu, Shinjuang, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical cone shape and a remaining photoresist layer. The dielectric layer is thus exposed in the lightly doped area. Specially, the bottom width of the first gate is narrower than that of the first metal layer and the symmetrical cone shape is gradually thinner from bottom to top. Using the gate as a mask, an n-ion implantation is performed to form a self-aligned and symmetrical LDD region in a semiconductor layer without additional photolithography steps.