The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Jan. 29, 2001
Applicants:
Atsushi Shiota, Ibaraki, JP;
Kouji Sumiya, Ibaraki, JP;
Inventors:
Atsushi Shiota, Ibaraki, JP;
Kouji Sumiya, Ibaraki, JP;
Assignee:
JSR Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B01J019/08 ; B32B009/04 ;
U.S. Cl.
CPC ...
Abstract
A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.