The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2005

Filed:

Mar. 19, 2002
Applicants:

Tze-chia Lin, Taipei, TW;

Tsung-yuan Chiang, Banchian, TW;

Pin-hao Sher, Tainan, TW;

Yen-hung Chen, Hsinchu, TW;

Ming-hsien Chou, Hsin-Chu, TW;

Inventors:

Tze-Chia Lin, Taipei, TW;

Tsung-Yuan Chiang, Banchian, TW;

Pin-Hao Sher, Tainan, TW;

Yen-Hung Chen, Hsinchu, TW;

Ming-Hsien Chou, Hsin-Chu, TW;

Assignee:

HC Photonics Corporation, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F001/355 ; G02F001/37 ; G02F001/39 ;
U.S. Cl.
CPC ...
Abstract

A method of patterning and fabricating poled dielectric microstructures in dielectric materials comprising the following steps. A poled dielectric microstructure within a dielectric material is provided. The poled dielectric microstructure is then segmented into a plurality of independent sub-structures. The poled dielectric microstructures are then fabricated within each of the plurality of independent sub-structures. Additional processes and a novel poling setup for improving and implementing this patterning and fabrication method are also disclosed.


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