The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Aug. 21, 2002
Applicants:
Theodore M. Taylor, Boise, ID (US);
Won-joo Kim, Boise, ID (US);
John K. Skrovan, Granger, TX (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L029/72 ;
U.S. Cl.
CPC ...
Abstract
A buried transistor particularly suitable for SOI technology, where the transistor is fabricated within a trench in a substrate and the resulting transistor incorporates completely isolated active areas. The resulting substrate has a decreased topography and there is no need for polysilicon (or other) plugs to connect to the transistor, unless desired. With this invention, better control is achieved in processing, particularly of gate length. The substrate having the buried transistor can be silicon oxide bonded to another substrate to form an SOI structure.