The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
May. 10, 2002
Kazuyoshi Inoue, Sodegaura, JP;
Shigeo Matsuzaki, Sodegaura, JP;
Kazuyoshi Inoue, Sodegaura, JP;
Shigeo Matsuzaki, Sodegaura, JP;
Idemitsu Kosan Co., Ltd., , JP;
Abstract
A semiconductor deviceobtained by depositing, on a substrate, a gate electrodeformed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film, an α-Si:H(i) film, a channel protection layer, an α-Si:H(n) film, a source/drain electrodeformed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film, and a drive electrode. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrodeand the source/drain electrodeare formed to manufacture the semiconductor device. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.