The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Jun. 25, 2003
Kazuaki Ohmi, Yokohama, JP;
Takao Yonehara, Atsugi, JP;
Kiyofumi Sakaguchi, Yokohama, JP;
Kazutaka Yanagita, Yokohama, JP;
Hirokazu Kurisu, Nagoya, JP;
Kazuaki Ohmi, Yokohama, JP;
Takao Yonehara, Atsugi, JP;
Kiyofumi Sakaguchi, Yokohama, JP;
Kazutaka Yanagita, Yokohama, JP;
Hirokazu Kurisu, Nagoya, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle () and injected into the porous layer of a bonded substrate stack () while rotating the bonded substrate stack () about an axis (C) in a direction (R), thereby separating the bonded substrate stack () into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack () is to be separated, the ejection nozzle () is located within a range (B).