The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Nov. 21, 2003
Yasutaka Nishioka, Tokyo, JP;
Junjiro Sakai, Tokyo, JP;
Shingo Tomohisa, Tokyo, JP;
Susumu Matsumoto, Osaka, JP;
Fumio Iwamoto, Kyoto, JP;
Michinari Yamanaka, Osaka, JP;
Yasutaka Nishioka, Tokyo, JP;
Junjiro Sakai, Tokyo, JP;
Shingo Tomohisa, Tokyo, JP;
Susumu Matsumoto, Osaka, JP;
Fumio Iwamoto, Kyoto, JP;
Michinari Yamanaka, Osaka, JP;
Renesas Technology Corp., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
It is an object to provide a semiconductor device having a buried multilayer wiring structure in which generation of a resolution defect of a resist pattern is suppressed and generation of a defective wiring caused by the resolution defect is reduced. After a via hole () reaching an etching stopper film () is formed, annealing is carried out at 300 to 400° C. with the via hole () opened. As an annealing method, it is possible to use both a method using a hot plate and a method using a heat treating furnace. In order to suppress an influence on a lower wiring () which has been manufactured, heating is carried out for a short time of approximately 5 to 10 minutes by using the hot plate. Consequently, a by-product staying in an interface of an upper protective film () and an interlayer dielectric film () having a low dielectric constant and a by-product staying in an interface of the etching stopper film () and the interlayer dielectric film () having a low dielectric constant are discharged so that an amount of the residual by-product can be decreased.