The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
May. 09, 2002
Olivier Menut, Grenoble, FR;
Herve Jaouen, Meylan, FR;
Olivier Menut, Grenoble, FR;
Herve Jaouen, Meylan, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
The transistor includes an emitter regiondisposed in a first isolating wellformed in a semiconductor bulk. An extrinsic collector regionis disposed in a second isolating wellformed in the semiconductor bulk SB and separated laterally from the first well by a bulk separator area. An intrinsic collector region is situated in the bulk separator areain contact with the extrinsic collector region. An intrinsic base regionis formed which is thinner laterally than vertically and in contact with the intrinsic collector region and in contact with the emitter region through bearing on a vertical flank of the first isolating well facing a vertical flank of the second isolating well. An extrinsic base regionis formed which is substantially perpendicular to the intrinsic base region in the top part of the bulk separator area, and contact terminals C, B, E respectively in contact with the extrinsic collector region, the extrinsic base region, and the emitter region.