The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Sep. 18, 2002
Jean Yee-mei Yang, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Jean Yee-Mei Yang, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A non-volatile multi-bit memory cell is presented which comprises a source, a drain, a channel coupling the source and the drain, and a gate with a plurality of charge trapping regions located so that a trapped charge in each charge trapping region is enabled to affect the influence of the gate voltage on the flow of electrons in the channel. The charge trapping regions are in multiple layers of oxide/nitride/oxide and there can be multiple levels of charge trapping regions. Charges are stored in the nitride layers and isolated by the oxide layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile