The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Aug. 05, 2002
Shuichi Ueno, Tokyo, JP;
Haruo Furuta, Tokyo, JP;
Shigehiro Kuge, Tokyo, JP;
Hiroshi Kato, Tokyo, JP;
Shuichi Ueno, Tokyo, JP;
Haruo Furuta, Tokyo, JP;
Shigehiro Kuge, Tokyo, JP;
Hiroshi Kato, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device is provided which includes a diode formed of a MISFET and having a current-voltage characteristic close to that of an ideal diode. Negatively charged particles (e.g. electrons:) are trapped on the drain region () side of a silicon nitride film () sandwiched between films of silicon oxide (). When a bias voltage is applied between the drain and source with the negatively charged particles () thus trapped and in-channel charged particles () induced by them, the MISFET exhibits different threshold values for channel formation depending on whether it is a forward bias or a reverse bias. That is to say, when a reverse bias is applied, the channel forms insufficiently and the source-drain current is less likely to flow, while the channel forms sufficiently and a large source-drain current flows when a forward bias is applied. This offers a current-voltage characteristic close to that of the ideal diode.