The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Apr. 10, 2003
Applicants:
Freidoon Mehrad, Plano, TX (US);
Suresh Potla, Dallas, TX (US);
Zhihao Chen, Plano, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/788 ;
U.S. Cl.
CPC ...
Abstract
A method of forming a flash memory array structure includes forming a first dielectric layer outwardly from a semiconductor substrate, removing a portion of the first dielectric layer and the substrate to create a trench isolation region, forming a second dielectric layer in the trench isolation region, removing a portion of the second dielectric layer to create an exposed substrate region proximate a bottom of the trench isolation region, doping the exposed substrate region with an n-type dopant, and forming a silicide region in the exposed substrate region.