The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jul. 17, 2003
Shinichi Watanabe, Yokohama, JP;
Toyota Morimoto, Sagamihara, JP;
Tohru Ozaki, Tokyo, JP;
Haruhiko Koyama, Yokohama, JP;
Shinichi Watanabe, Yokohama, JP;
Toyota Morimoto, Sagamihara, JP;
Tohru Ozaki, Tokyo, JP;
Haruhiko Koyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A first impurity diffusion area is formed in the semiconductor substrate at a bottom of the first trench formed in a surface of the semiconductor substrate. A second impurity diffusion area is formed in the surface of the semiconductor substrate, each have one end contacting a first side wall of the first trench, and each have the same conductive type as the first impurity diffusion area. A first gate electrode is provided on the first side wall between the first and second impurity diffusion areas with a gate insulating film interposed therebetween. A first ferroelectric film is provided on a first lower electrode, which is provided on the second impurity area. A first upper electrode is provided on the first ferroelectric film. A first interconnection layer is provided above the first upper electrode. A first contact plug electrically connects the first interconnection layer and first impurity diffusion area.