The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Nov. 28, 2003
Richard A. Soref, Newton Centre, MA (US);
Jose Menendez, Tempe, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Richard A. Soref, Newton Centre, MA (US);
Jose Menendez, Tempe, AZ (US);
John Kouvetakis, Mesa, AZ (US);
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
This invention teaches two new families of Si-based Ge/SnGeheterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnSiGebuffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge/SnGeMQW by selecting the VS lattice parameter to be approx midway between the layer lattices.