The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Sep. 22, 2003
Balasubramanian Ramachandran, Santa Clara, CA (US);
Ravi Jallepally, Santa Clara, CA (US);
Ryan C. Boas, Watertown, MA (US);
Sundar Ramamurthy, Fremont, CA (US);
Amir Al-bayati, San Jose, CA (US);
Houda Graoui, Santa Clara, CA (US);
Joseph M. Spear, Portland, OR (US);
Balasubramanian Ramachandran, Santa Clara, CA (US);
Ravi Jallepally, Santa Clara, CA (US);
Ryan C. Boas, Watertown, MA (US);
Sundar Ramamurthy, Fremont, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Houda Graoui, Santa Clara, CA (US);
Joseph M. Spear, Portland, OR (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Lamp based spike annealing was improved to address the aggressive requirements of <100 nm Ultra Shallow Junction (USJ) technologies. Improvements focused on enhancing cool down rates, and thereby improving spike sharpness. Boron ion implanted substrates with varying ion-implanted energy and dose were then annealed to characterize the improvements in spike annealing. A greater than 10% improvement in sheet resistance and junction depth was realized on substrates that were annealed with the improved spike profile. The improved spike anneal had the same comparable uniformity to the standard spike anneal.