The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2005

Filed:

Jun. 30, 2003
Applicants:

Christian Krueger, Liegau-Augustusbad, DE;

Thomas Feudel, Radebeul, DE;

Volker Grimm, Langebrueck, DE;

Inventors:

Christian Krueger, Liegau-Augustusbad, DE;

Thomas Feudel, Radebeul, DE;

Volker Grimm, Langebrueck, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.


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