The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jun. 20, 2003
Tae-wan Kim, Anyang, KR;
Kee-won Kim, Yongin, KR;
Wan-jun Park, Seoul, KR;
I-hun Song, Seongnam, KR;
Sang-jin Park, Pyeongtaek, KR;
Tae-wan Kim, Anyang, KR;
Kee-won Kim, Yongin, KR;
Wan-jun Park, Seoul, KR;
I-hun Song, Seongnam, KR;
Sang-jin Park, Pyeongtaek, KR;
Samsung Electronics Co, Ltd., Kyungki-do, KR;
Abstract
A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.