The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Aug. 15, 2003
Qi Xiang, San Jose, CA (US);
Ming Ren Lin, Cupertino, CA (US);
Minh V. Ngo, Fremont, CA (US);
Haihong Wang, Fremont, CA (US);
Qi Xiang, San Jose, CA (US);
Ming Ren Lin, Cupertino, CA (US);
Minh V. Ngo, Fremont, CA (US);
Haihong Wang, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The formation of shallow trench isolations in a strained silicon MOSFET includes implantation of a dopant into overhang portions of the strained silicon layer and silicon germanium layer at the edges of trenches in which shallow trench isolations are to be formed. The conductivity type of the dopant is chosen to be opposite the conductivity type of the source and drain dopants. The implanted dopant increases the threshold voltage Vt beneath the ends of the gate in overhang portions of the strained silicon layer so that it is approximately equal to or greater than that of the remainder of the MOSFET. The resulting strained silicon MOSFET exhibits reduced leakage current beneath the ends of the gate.