The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
May. 19, 2004
Leo Wang, Hsinchu, TW;
Chien-chih Du, Hsinchu, TW;
Saysamone Pittikoun, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method of fabricating a flash memory is provided. A substrate having several device isolation structures for defining an active region is provided. A tunneling dielectric layer and a patterned mask layer are sequentially formed over the active region of the substrate. A sacrificial layer is formed on the substrates. Thereafter, the sacrificial layer is patterned to retain a part of sacrificial layer on the device isolation structures. The patterned mask layer is removed, and a conductive layer that exposed the top section of the sacrificial layers is formed over the substrate. After removing the sacrificial layer, an inter-gate dielectric layer is formed over the substrate. A control gate is formed over the inter-gate dielectric layer. Finally, a source region and a drain region are formed in the substrate on each side of the control gate.