The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Jun. 17, 2003
Christy Mei-chu Woo, Cupertino, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
James N. Pan, Fishkill, NY (US);
Jinsong Yin, Sunnyvale, CA (US);
Christy Mei-Chu Woo, Cupertino, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
James N. Pan, Fishkill, NY (US);
Jinsong Yin, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for forming a semiconductor structure removes the temporary gate formed on the dielectric layer to expose a recess in which oxygen-rich CVD oxide is deposited. A tantalum layer is then deposited by low-power physical vapor deposition on the CVD oxide. Annealing is then performed to create a TaOregion and a Ta region from the deposited oxide and Ta. This creates a low carbon-content TaOand a metallic Ta gate in a single process step.