The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Dec. 17, 2002
Ki-chul Kim, Sungnam, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Suwon, KR;
Jeong-hee Chung, Seoul, KR;
Wan-don Kim, Yongin, KR;
Yun-jung Lee, Seoul, KR;
Han-mei Choi, Seoul, KR;
Ki-chul Kim, Sungnam, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Suwon, KR;
Jeong-hee Chung, Seoul, KR;
Wan-don Kim, Yongin, KR;
Yun-jung Lee, Seoul, KR;
Han-mei Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.