The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
May. 24, 2001
GE Xu, Tokyo, JP;
Hiroshi Nogami, Tokyo, JP;
Ge Xu, Tokyo, JP;
Hiroshi Nogami, Tokyo, JP;
Anelva Corporation, Fuchu, JP;
Abstract
A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vesselThe vacuum vessel has a partitioning wall sectionfor separating the inside thereof into a plasma-generating spaceand a film deposition process spaceThe partitioning wall section has a plurality of through-holesand diffusion holesAn interior spacereceives the silane or the like fed into the film deposition process space through diffusion holesThe radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.