The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2005

Filed:

Oct. 27, 2003
Applicants:

Karl Mautz, Austin, TX (US);

Sebastian Schmidt, Dresden, DE;

Thorsten Schedel, Dresden, DE;

Inventors:

Karl Mautz, Austin, TX (US);

Sebastian Schmidt, Dresden, DE;

Thorsten Schedel, Dresden, DE;

Assignees:

Infineon Technologies SC300 GmbH & Co. KG, Dresden, DE;

Infineon Technologies AG, Munich, DE;

Motorola Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F019/00 ;
U.S. Cl.
CPC ...
Abstract

Processing parameters of at least one plate-shaped object, e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool are adjusted depending on which processing device out of at least one set of processing devices has been used for the semiconductor device in a preceding step. A virtual or physical tag is generated, which connects the semiconductor device identification with the processing device identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-units. The amount of compensation is detected and evaluated by metrology tools, which—depending on the sequence of the metrology step relative to the processing step to be adjusted—either feed-forward or feed-backward their results to the processing tool. The yield of semiconductor device production is advantageously increased.


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