The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jun. 13, 2003
Applicants:
Bum Ki Moon, Tokyo, JP;
Gerhard Beitel, Kanagawa, JP;
Inventors:
Bum Ki Moon, Tokyo, JP;
Gerhard Beitel, Kanagawa, JP;
Assignee:
Infineon Technologies Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G004/228 ;
U.S. Cl.
CPC ...
Abstract
Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer has, for example, lanthium nitride, titanium zirconium nitride, amorphous sm—co, nanostructured carbon, or a combination thereof.