The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jan. 10, 2003
Hidemitsu Aoki, Kanagawa, JP;
Kenichi Nakabeppu, Kanagawa, JP;
Hiroaki Tomimori, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
Nobuo Hironaga, Kanagawa, JP;
Hiroyuki Kunishima, Kanagawa, JP;
Hidemitsu Aoki, Kanagawa, JP;
Kenichi Nakabeppu, Kanagawa, JP;
Hiroaki Tomimori, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
Nobuo Hironaga, Kanagawa, JP;
Hiroyuki Kunishima, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or COwater and is dried.