The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Jun. 26, 2002
Toyohiro Chikyow, Tsukuba, JP;
Hideomi Koinuma, Tokyo, JP;
Masashi Kawasaki, Sagamihara, JP;
Yoo Young Zo, Sagamihara, JP;
Yoshinori Konishi, Yokosuka, JP;
Yoshiyuki Yonezawa, Yokosuka, JP;
Toyohiro Chikyow, Tsukuba, JP;
Hideomi Koinuma, Tokyo, JP;
Masashi Kawasaki, Sagamihara, JP;
Yoo Young Zo, Sagamihara, JP;
Yoshinori Konishi, Yokosuka, JP;
Yoshiyuki Yonezawa, Yokosuka, JP;
National Institute for Materials Science, Ibaraki, JP;
Tokyo Institute of Technology, Tokyo, JP;
Fuji Electric Corporate Research & Development, Ltd., Kanagawa, JP;
Abstract
The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.