The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Apr. 11, 2003
Quanyuan Shang, Saratoga, CA (US);
John M. White, Hayward, CA (US);
Robert Z. Bachrach, Burlingame, CA (US);
Kam S. Law, Union City, CA (US);
Quanyuan Shang, Saratoga, CA (US);
John M. White, Hayward, CA (US);
Robert Z. Bachrach, Burlingame, CA (US);
Kam S. Law, Union City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.