The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Apr. 29, 2002
Ernst-christian Richter, Erlangen-Bruck, DE;
Michael Sebald, Weisendorf, DE;
Ernst-Christian Richter, Erlangen-Bruck, DE;
Michael Sebald, Weisendorf, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range Δλ. In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range Δλ. The photoresist layer is first exposed in parts to light from the defined wavelength range Δλ, the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range Δλ, the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.