The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Dec. 02, 2003
Tae-jung Lee, Kyungki-Do, KR;
Byung-sun Kim, Suwon, KR;
Joon-hyung Lee, Seongnam, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A layout of a memory cell of a dual-port semiconductor memory device provides for one memory cell that includes a total of eight transistors, including two NMOS scan transistors. Among the transistors, two PMOS transistors and six NMOS transistors are disposed in one N-well area and one contiguous P-well area of a semiconductor substrate, respectively. The N-well area is disposed at a corner of the memory cell for improving efficiency of the layout. Since one N-well area and one P-well area are formed in the semiconductor substrate, the size of an isolated area between the N-well area and the P-well area can be reduced, thus also reducing the size of a memory cell.