The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2005

Filed:

Nov. 08, 2002
Applicants:

Dirk Wouters, Heverlee, BE;

Jean-luc Everaert, Gooik, BE;

Judit Lisoni, Heverlee, BE;

Inventors:

Dirk Wouters, Heverlee, BE;

Jean-Luc Everaert, Gooik, BE;

Judit Lisoni, Heverlee, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C015/00 ;
U.S. Cl.
CPC ...
Abstract

The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug. The bottom electrode stack is prepared by depositing a ferroelectric film atop an Ir or Ru metal electrode layer, then annealing the ferroelectric layer in an oxygen ambient wherein the partial pressure of oxygen is controlled at a level sufficient to oxidize the ferroelectric layer but not at a level sufficient to oxidize the metal electrode layer


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Wouters, Dirk. (2005). Simplified bottom electrode-barrier structure for making a ferroelectric capacitor stacked on a contact plug (U.S. Patent No. 6885570). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6885570

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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