The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Oct. 20, 2003
Hung-der Su, Kao-Hsiung County, TW;
Shien-yang Wu, Hsin-chu, TW;
Yung-shun Chen, Hsin chu, TW;
Kuan-yao Wang, Anding Township, Tainan County, TW;
Sun-jay Chang, Taidung County, TW;
Hung-Der Su, Kao-Hsiung County, TW;
Shien-Yang Wu, Hsin-chu, TW;
Yung-Shun Chen, Hsin chu, TW;
Kuan-Yao Wang, Anding Township, Tainan County, TW;
Sun-Jay Chang, Taidung County, TW;
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Abstract
An apparatus for characterizing capacitance and thickness of an insulating layer constructed between a conductive gate and a substrate has at least one test structure formed at a surface of a substrate. Each test structure has a bulk region formed of a semiconductor within the surface. Further the test structure has at least one source region and one drain region within the bulk region. A thin insulating layer is placed above the each source region, each drain region, and the bulk region. A conductive gate is placed above the thin insulating layer. A capacitance-voltage measuring device measures a capacitance value of the test structure, while forcing the bulk region between the source region and the drain region to be floating. An insulating layer thickness calculator determines the thickness of the insulating layer from the capacitance.