The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Nov. 20, 2002
Applicants:
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Hao LI, Chandler, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Inventors:
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Hao Li, Chandler, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L029/72 ;
U.S. Cl.
CPC ...
Abstract
A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.