The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Apr. 20, 2004
Mayumi Takamori, Sagamihara, JP;
Noriaki Oshima, Yokohama, JP;
Kazuhisa Kawano, Ebina, JP;
Tosoh Corporation, Yamaguchi, JP;
Abstract
An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2):wherein Rrepresents hydrogen or a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded; Rrepresents a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.