The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6884735 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 26, 2005

Filed:

Aug. 21, 2002
Applicants:

Uzodinma Okoroanyanwu, Mountain View, CA (US);

Alden Acheta, Brentwood, CA (US);

Inventors:

Uzodinma Okoroanyanwu, Mountain View, CA (US);

Alden Acheta, Brentwood, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ; G03C005/00 ;
U.S. Cl.
CPC ...
Abstract

An integrated circuit fabrication process including exposing a photoresist layer and providing a hydrophilic layer above the photoresist layer. The photoresist layer is exposed to a pattern of electromagnetic energy. The polymers in the hydrophilic layer can diffuse into the photoresist layer after provision of the hydrophilic layer. The diffusion can lead to plasticization of the photoresist layer polymers in exposed regions relative to unexposed regions. The process can be utilized to form a large variety of integrated circuit structures including gate structures and other features with wide process latitude and smooth feature side walls.


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