The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Feb. 21, 2003
Kentaro Nakanishi, Nara, JP;
Hiroaki Nakaoka, Kyoto, JP;
Kentaro Nakanishi, Nara, JP;
Hiroaki Nakaoka, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Semiconductor devices each having a semiconductor layer (), a gate insulating film (), a gate electrode (), an offset spacer layer (), and SD extension diffusion layers () into which ions have been implanted by using the gate electrode () and the offset spacer layer () as a mask are formed by varying the film thickness of the offset spacer layer () and leakage current values in the respective semiconductor devices are measured. The results of the measurements show that the film thickness value of the offset spacer layer () and the leakage current value have a correlation therebetween and that the film thickness value of the offset spacer layer () when the leakage current value becomes zero corresponds to the length of the portion of the semiconductor layer () extending from under the outer end of the offset spacer layer () to the tip end of an impurity diffusion layer.