The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Feb. 02, 2004
Haruhito Nishibe, Kawasaki, JP;
Michio Oryoji, Kawasaki, JP;
Haruhito Nishibe, Kawasaki, JP;
Michio Oryoji, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
In a via-first Dual Damascene method, after a via hole and a wiring trench are formed, an SiN film, an exposed portion of an SiC film and an exposed portion of an SiC film are removed by etching. As a result, the via hole reaches a Cu wire, and the wiring trench reaches an SiOC film. A reaction product adheres mainly to a side wall portion of the wiring trench. The reaction product also adheres to other spots, but an amount of adherence to the side wall portion is the largest. Subsequently, oxygen plasma treatment is performed for insides of the via hole and the wiring trench. As a result of this oxygen plasma treatment, the reaction product is removed.