The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Apr. 08, 2003
Chia-ming Lee, Yilan County, TW;
Jen-inn Chyi, Taoyuan County, TW;
Chia-Ming Lee, Yilan County, TW;
Jen-Inn Chyi, Taoyuan County, TW;
Tekcore Co., Ltd, Nantou, TW;
Abstract
According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an nlayer disposed non-extensively and flush on one side of the n layer. Furthermore, a player is disposed co-extensively on the nlayer of the LED according to the invention, with a p layer further disposed co-extensively on the player. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An nlayer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite nlayer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the nlayer.