The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Jun. 03, 2003
William Roberts, Mechanicsville, VA (US);
Diem-thy Ngu-uyen Tran, Richmond, VA (US);
Paul Jowett, Richmond, VA (US);
Nicholas Clements, Glen Allen, VA (US);
Igor Jekauc, Richmond, VA (US);
Karen Anne Davidson, Mechanicsville, VA (US);
Winifried Sabisch, Munich, DE;
William Roberts, Mechanicsville, VA (US);
Diem-Thy Ngu-Uyen Tran, Richmond, VA (US);
Paul Jowett, Richmond, VA (US);
Nicholas Clements, Glen Allen, VA (US);
Igor Jekauc, Richmond, VA (US);
Karen Anne Davidson, Mechanicsville, VA (US);
Winifried Sabisch, Munich, DE;
Infineon Technologies Richmond, LP, Sandston, VA (US);
Abstract
A method of aligning a second layer to a first layer of a semiconductor structure by forming a first layer of a wafer having a distinguished feature via a first etching process that employs a first ionized gas generating machine. Forming a second layer having a circuit pattern via a second etching process that employs a second ionized gas generating machine, wherein the forming the second layer includes minimizing relative shifting between the distinguished feature located at an edge of the wafer for the first layer and the second circuit pattern located at the edge of the wafer for the second layer.