The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Apr. 16, 2002
Applicants:
Steven C. Shannon, San Mateo, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Michael Barnes, San Ramon, CA (US);
Lee Lablanc, Sunnyvale, CA (US);
Inventors:
Steven C. Shannon, San Mateo, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Michael Barnes, San Ramon, CA (US);
Lee LaBlanc, Sunnyvale, CA (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01F019/00 ;
U.S. Cl.
CPC ...
Abstract
A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, the placement and design of a harmonic routing circuit is determined to shunt the harmonic energy to ground.